標題: Enhanced electron emission from phosphorus-doped diamond-clad silicon field emitter arrays
作者: Ku, TK
Chen, SH
Yang, CD
She, NJ
Wang, CC
Chen, CF
Hsieh, IJ
Cheng, HC
交大名義發表
National Chiao Tung University
公開日期: 1-五月-1996
摘要: Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function, Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones, After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities.
URI: http://dx.doi.org/10.1109/55.491831
http://hdl.handle.net/11536/1317
ISSN: 0741-3106
DOI: 10.1109/55.491831
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 17
Issue: 5
起始頁: 208
結束頁: 210
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UH51200006.pdf