標題: Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film
作者: Lin, Meng-Han
Wu, Ming-Chi
Lin, Chun-Chieh
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RRAM;bismuth titanate oxide (BTO);sol-gel method
公開日期: 2009
摘要: Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (similar to 10(4)) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 10(4) s under 0.3 V voltage stress at room temperature (RT) and 85 degrees C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 x 10(6) s at RT and 85 degrees C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application
URI: http://hdl.handle.net/11536/13167
http://dx.doi.org/10.1080/00150190902870101
ISSN: 0015-0193
DOI: 10.1080/00150190902870101
期刊: FERROELECTRICS
Volume: 380
起始頁: 30
結束頁: 37
顯示於類別:會議論文


文件中的檔案:

  1. 000266720600005.pdf