標題: A novel wafer reclaim method for amorphous SiC and carbon doped oxide films
作者: Tsui, BY
Fang, KL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: amorphous silicon carbide;low dielectric constant;wafer reclaim
公開日期: 1-十一月-2005
摘要: Amorphous SiC (a-SiC) films are the most promising dielectric diffusion barriers to replace silicon nitride in Cu-interconnect technology. However, reclaim of wafers with a-SiC films is a challenge issue for mass production. In this paper, a novel wafer reclaim method is proposed. It is observed that a-SiC can be oxidized to SiO2 in both dry O-2 and steam ambients at temperatures as low as 550 degrees C. The oxidation mechanism can be described by the Deal-Grove model that is traditionally used to describe oxidation of Si. Experiments prove that the oxidation process is clean and uniform. It is also observed that carbon doped oxide (CDO) films can be oxidized easily, too. Therefore, oxidation followed by HF etching could be a universal process to reclaim wafers deposited with a-SiC or CDO films. Since the oxidation rate of Si substrates at medium temperatures is much lower than that of a-SiC and CDO films, the oxidation process is virtually self-limiting. Compared with a traditional reclaim method based on wafer polishing, this universal oxidation-etching method exhibits great benefits in terms of low cost, high throughput, and the ability to perform nearly unlimited numbers of reclaim cycles.
URI: http://dx.doi.org/10.1109/TSM.2005.858501
http://hdl.handle.net/11536/13148
ISSN: 0894-6507
DOI: 10.1109/TSM.2005.858501
期刊: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume: 18
Issue: 4
起始頁: 716
結束頁: 721
顯示於類別:期刊論文


文件中的檔案:

  1. 000233379400032.pdf