標題: Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs
作者: Lee, WN
Chen, YF
Huang, JH
Guo, XJ
Kuo, CT
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Nov-2005
摘要: In this study, the effects of doping type and concentration on arsenic precipitation in low-temperature-grown GaAs upon postgrowth annealing at 600, 700. and 800 degrees C were investigated. Three undoped/Si-doped/undoped (i-n-i) regions and three undoped/Be-doped/ undoped (i-p-i) regions were grown by low-temperature Molecular beam epitaxy, The results show that arsenic precipitation is dependent on doping type and doping concentration. Arsenic depletion was observed in all Be-doped layers for all annealing temperatures. However, a "dual" arsenic precipitation behavior was observed in Si-doped layers: As accumulates in [Si]=2 X 10(18) cm(-3) doped layers, while it depletes in [Si]=2 X 10(16) and 2 X 10(17) cm(-3) doped layers, We attribute this "dual" As precipitation phenomenon in Si-doped layers to the different depletion depths. (c) 2005 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.2131872
http://hdl.handle.net/11536/13147
ISSN: 1071-1023
DOI: 10.1116/1.2131872
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 23
Issue: 6
起始頁: 2514
結束頁: 2517
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