標題: Effects of buffer layer materials and process conditions on growth mechanisms of forming networks of SWNTs by microwave plasma chemical vapor deposition
作者: Wang, WH
Peng, YR
Kuo, CT
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: buffer layer;networks;single-walled carbon nanotubes (SWNTs);microwave plasma chemical vapor deposition (MPCVD)
公開日期: 1-Nov-2005
摘要: This study investigates the growth mechanism of 1C compatible processes and to the feasibility of synthesizing networks of single-walled carbon nanotubes (SWNT-) at lower temperatures (similar to 610 degrees C) on Si wafer using microwave plasma chemical vapor deposition (MPCVD) with CH4 and H-2 as source gases. The effects of the buffer layer materials (ZnS-SiO2, Al2O3, AlON, and AlN) and process conditions on growth of carbon nanostructures with Co as catalyst were also examined, where the buffer layers and Co catalyst were deposited in sequence by physical vapor deposition (PVD), followed by H-plasma pretreatment before deposition of carbon nanostructures. Additionally, the morphologies and bonding structures of carbon nanostructures were characterized by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and Raman Spectroscopy. Analytical results demonstrate that networks of SIANTs are more favorable to be synthesized by selecting proper buffer layer material (e.g., AION), and under higher temperatures, thinner catalyst thickness (e.g., 5 run) and lower CH4/H-2 ratio (e.g., 5/100 sccm/sccm). The networks of SWNTs can be fabricated at temperatures as low as similar to 610 degrees C by manipulating these parameters. In conclusion, the growth mechanism determines the conditions for the formation of nano-sized extrusions on catalyst particles surface. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.diamond.2005.08.053
http://hdl.handle.net/11536/13129
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2005.08.053
期刊: DIAMOND AND RELATED MATERIALS
Volume: 14
Issue: 11-12
起始頁: 1906
結束頁: 1910
Appears in Collections:Conferences Paper


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