標題: Microwave plasma chemical vapor deposition of cone-like structure of diamond/SiC/Si on Si (100)
作者: Yan, JK
Chang, L
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: diamond;nucleation;epitaxy;transmission electron microscopy (TEM)
公開日期: 1-十一月-2005
摘要: Diamond deposition on I x I cm 2 Si (100) substrates with bias was carried out by microwave plasma chemical vapor deposition (MPCVD). Distribution of deposited diamonds has been significantly improved in uniformity over all the Si substrate surface area by using a novel designed dome-shaped Mo anode. The deposits were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman analysis. SEM observations show that there is a high density of cone-like particles uniformly deposited on the surface of the substrate in short bias nucleation period. The average diameter, height and density of cone-like structure were increased with methane concentration in the bias stage. TEM reveals that the cone-like structure is actually composed of Si conic crystal covered with diamond. Between Si and diamond, a thin layer of cubic SiC is found in epitaxy with Si. Furthermore, for 3% CH4 concentration, the range of diameter of cone-like structure was about 2090 nm and the size of diamond was about 10-60 nm. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.diamond.2005.09.019
http://hdl.handle.net/11536/13126
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2005.09.019
期刊: DIAMOND AND RELATED MATERIALS
Volume: 14
Issue: 11-12
起始頁: 1770
結束頁: 1775
顯示於類別:會議論文


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