標題: The orientation effect of silicon grains on diamond deposition
作者: Su, YH
Chang, L
Chen, HG
Yan, JK
Chou, T
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: plasma CVD;diamond crystal;nucleation;bias growth
公開日期: 1-十一月-2005
摘要: Diamond deposition on mirror-polished polycrystalline silicon substrates which have grains in various orientations has been investigated using electron backscatter diffraction (EBSD) method with scanning electron microscopy (SEMI). Diamond was deposited by microwave plasma chemical vapor deposition with application of a negative bias voltage oil the substrate. The evidence from systematic SEM observations shows that silicon orientation determined by EBSD has a strong effect on diamond nucleation. In general, the diamond nucleation density on Si grains oriented close to < 100 > is the highest, while it is the lowest for those grains close to < 111 >, under the same experimental conditions for deposition. The same phenomena have been observed in the range of methane concentration from 2% to 4% in hydrogen. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.diamond.2005.05.005
http://hdl.handle.net/11536/13125
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2005.05.005
期刊: DIAMOND AND RELATED MATERIALS
Volume: 14
Issue: 11-12
起始頁: 1753
結束頁: 1756
顯示於類別:會議論文


文件中的檔案:

  1. 000233983600004.pdf