標題: Very low noise RIF nMOSFETs on plastic by substrate thinning and wafer transfer
作者: Kao, HL
Hung, BF
Chin, A
Lai, JM
Lee, CF
McAlister, SP
Chi, CC
奈米科技中心
Center for Nanoscience and Technology
關鍵字: associated gain;metal-oxide semiconductor field-effect transistor (MOSFET);minimum noise figure;plastic;radio frequency (RF)
公開日期: 1-十一月-2005
摘要: A very low minimum noise figure (NFmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-mu m radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (similar to 30 mu m) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NFmin anda 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.
URI: http://dx.doi.org/10.1109/LMWC.2005.858999
http://hdl.handle.net/11536/13121
ISSN: 1531-1309
DOI: 10.1109/LMWC.2005.858999
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 15
Issue: 11
起始頁: 757
結束頁: 759
顯示於類別:期刊論文


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  1. 000233208200013.pdf