標題: Physical characterization of ZnO nanorods grown on Si from aqueous solution and annealed at various atmospheres
作者: Yang, CC
Chen, SY
Lee, HY
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Nov-2005
摘要: High-density ZnO nanorods were vertically grown on Si coated with ZnO film (ZnO/Si substrate) from aqueous solution at low temperatures. The ZnO nanorods after annealed in various atmospheres still present good c-axis crystalline character but exhibit remarkable differences in photoluminescence (PL) properties. Enhancement of PL properties due to N-2-atmosphere annealing for ultraviolet emission can be attributed to the reduction of defect density because the nonparamagnetic singly ionized state (N-) can easily occupy the oxygen vacancies as evidenced by Raman spectroscopy and electron paramagnetic resonance spectrometry. The extended x-ray absorption fine structure reveals that the annealing atmosphere shows no apparent influence on the deep-level defects of ZnO nanorods except that some ions are possibly trapped or adsorbed on the surface of the ZnO nanorods. (c) 2005 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.2102967
http://hdl.handle.net/11536/13113
ISSN: 1071-1023
DOI: 10.1116/1.2102967
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 23
Issue: 6
起始頁: 2347
結束頁: 2350
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