Title: Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer
Authors: Chang, YA
Luo, CY
Ku, HC
Kuo, YK
Lin, CF
Wang, SC
光電工程學系
Department of Photonics
Keywords: semiconductor lasers;quaternary InAlGaN alloys;numerical simulation;electronic blocking layer;leakage current
Issue Date: 1-Nov-2005
Abstract: Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T(0)) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased To value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T(0) value is mainly attributed to the increase in electronic leakage current.
URI: http://dx.doi.org/10.1143/JJAP.44.7916
http://hdl.handle.net/11536/13087
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.7916
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 11
Begin Page: 7916
End Page: 7918
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