標題: Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off
作者: Chu, JT
Kao, CC
Huang, HW
Liang, WD
Chu, CF
Lu, TC
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: GaN LEDs;laser lift-off (LLO);wafer bonding;large-area light-emitting diode (LED)
公開日期: 1-Nov-2005
摘要: Large-area p-side-down InGaN light-emitting diodes (LEDs) 1000 x 1000 mu m(2) in size have been fabricated by laser lift-off (LLO). The p-side-down LEDs with different geometric patterns of n-electrodes were fabricated to investigate electrode pattern-dependent optical characteristics. The current crowding effect was observed in the large-area p-side-down InGaN LLO-LEDs. A LED with a well-designed n-electrode pattern shows a uniform distribution of light emission and a higher output power due to uniform current spreading. The output power saturation induced by the current crowding effect was investigated. In the absence of a transparent contact layer for current spreading, the n-electrode pattern has a marked influence on the current distribution and the consequent light output power of the large-area p-side-down LEDs.
URI: http://dx.doi.org/10.1143/JJAP.44.7910
http://hdl.handle.net/11536/13086
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.7910
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 11
起始頁: 7910
結束頁: 7912
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