標題: The synthesis and characterization of phosphorus-doped diamond films using trimethyl-phosphite as a doping source
作者: Chen, CF
Lo, SF
Chen, SH
交大名義發表
材料科學與工程學系
National Chiao Tung University
Department of Materials Science and Engineering
關鍵字: P-doped diamond films;trimethyl-phosphite;XRD characteristic;Fourier transform infrared spectroscopy (FTIR)
公開日期: 1-五月-1996
摘要: Producing impurity-doped diamond films is a critical task for modern electronic applications. In this study, the effects of phosphorus in the gas phase on the morphological features of polycrystalline diamond films were investigated. The diamond films were prepared on n-type Si(100) substrates by the microwave plasma chemical vapour deposition. A trimethyl-phosphite vapour was introduced to the CH4-CO2 gas mixture as a dopant source. Surface morphology changed from well-defined facets to ball-like features by increasing the dopant concentration in the gas phase. Phosphorus-doped diamond films of good quality and well defined facets could be obtained by reducing the carbon concentration of reactant gases. This reduction could be achieved by decreasing the CH4 flow rates during the deposition process. An increase in the the dopant source caused the growth rate to become lower, the nucleation density to reduce drastically, and the relative intensity of XRD characteristic (110) peak to increase significantly.
URI: http://hdl.handle.net/11536/1303
ISSN: 0925-9635
期刊: DIAMOND AND RELATED MATERIALS
Volume: 5
Issue: 6-8
起始頁: 766
結束頁: 770
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UR91000035.pdf