標題: Ion-channeling studies of InAs/GaAs quantum dots
作者: Niu, H
Chen, CH
Wang, HY
Wu, SC
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: quantum dots;GaAs;InAs;ion-channeling
公開日期: 1-Dec-2005
摘要: Determination of the strains in and around the quantum dots is important both to assess the results of the epitaxially grown thin film and to explain the optical performance of quantum dots samples. A series of InAs/GaAs quantum dots samples were fabricated by MBE in Stranski-Krastanov growth mode. The preliminary results of ion-channeling observations along < 001 > growth direction and < 011 > direction will be presented and discussed briefly. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.nimb.2005.07.094
http://hdl.handle.net/11536/13010
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2005.07.094
期刊: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume: 241
Issue: 1-4
起始頁: 470
結束頁: 474
Appears in Collections:Conferences Paper