標題: Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical design
作者: Lin, MH
Lin, YL
Chen, JM
Yeh, MS
Chang, KP
Su, KC
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: copper electromigration (EM);Cu/cap interface;Cu-silicide;preclean treatment
公開日期: 1-Dec-2005
摘要: A significant improvement of electromigration (EM) lifetime is achieved by modification of the preclean step before cap-layer deposition and by changing Cu cap/dielectric materials. A possible mechanism for EM lifetime enhancement was proposed. Cu-silicide formation prior to cap-layer deposition and adhesion of Cu/cap interface were found to be the critical factors in controlling Cu electromigration reliability. The adhesion of the Cu/cap interface can be directly correlated to electromigration median-time-to-failure and activation energy. Effects of layout geometrical variation and stress current direction were also investigated.
URI: http://dx.doi.org/10.1109/TED.2005.859597
http://hdl.handle.net/11536/12987
ISSN: 0018-9383
DOI: 10.1109/TED.2005.859597
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 52
Issue: 12
起始頁: 2602
結束頁: 2608
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