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DC FieldValueLanguage
dc.contributor.author鄭舜仁zh_TW
dc.contributor.authorCheng Shun-Jenen_US
dc.date.accessioned2016-03-28T08:17:19Z-
dc.date.available2016-03-28T08:17:19Z-
dc.date.issued2015en_US
dc.identifier.govdocMOST104-2112-M009-002-MY2zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/129868-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=11575711&docId=469859en_US
dc.description.sponsorship科技部zh_TW
dc.language.isozh_TWen_US
dc.title外加應力影響下單層二硫化鉬之多體及自旋性質:偽藍道能級之理論研究zh_TW
dc.titleTheoretical Studies of Fractionally Filled Pseudo-Landau Levels in Strained Mos2 Monolayersen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子物理學系(所)zh_TW
Appears in Collections:Research Plans