標題: Electron and hole in-plane g-factors in single In As quantum rings
作者: Kaji, R.
Tominaga, T.
Wu, Y. -N.
Cheng, S. -J.
Adachi, S.
電子物理學系
Department of Electrophysics
公開日期: 1-Jan-2015
摘要: The electron and hole in-plane g-factors were studied in individual InAs/GaAs quantum rings (QRs). From the magneto-photoluminescence measurements under a transverse magnetic field, we evaluated the in-plane g-factors of electron and hole spins by rotating the sample systematically along the crystal growth axis. The experimental results indicate that the in-plane and the out-of-plane anisotropies in hole g-factor are larger than those of electron g-factor, and the value of the hole in-plane g-factor varies largely from QR to QR while the electron g-factor is almost a constant value. From the model calculation considering the effects of shape anisotropies and uniaxial stress, we examined the correlation between the in-plane g-factors and the degree of valence band mixing. Further, the experimentally obtained trend in g-factors was in agreement qualitatively with theoretical consideration.
URI: http://dx.doi.org/10.1088/1742-6596/647/1/012011
http://hdl.handle.net/11536/129743
ISSN: 1742-6588
DOI: 10.1088/1742-6596/647/1/012011
期刊: 19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19)
Volume: 647
起始頁: 0
結束頁: 0
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