標題: Comparison of the electronic structures of AIN nanotips grown on p- and n-type Si substrates
作者: Chiou, JW
Tsai, HM
Pao, CW
Dong, CL
Chang, CL
Chien, FZ
Pong, WF
Tsai, MH
Shi, SC
Chen, CF
Chen, LC
Chen, KH
Hong, IH
Chen, CH
Lin, HJ
Guo, JH
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 7-Dec-2005
摘要: At and N K-edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy (SPEM) and x-ray emission measurements were performed on AIN nanotips grown on p- and n-type Si substrates (p-AIN and n-AIN). Features and intensities in the Al and N K-edge XANES spectra of these AIN nanotips overall are similar. In contrast, the intensities of the valence-band SPEM spectra of p-AIN are apparently larger than those of n-AIN, which indicates that the valence-band density of states of p-AIN exceeds that of n-AIN. This result may be related to the observed enhancement of field-emission intensity of AIN nanotips grown on the p-type Si substrate.
URI: http://dx.doi.org/10.1088/0953-8984/17/48/006
http://hdl.handle.net/11536/12973
ISSN: 0953-8984
DOI: 10.1088/0953-8984/17/48/006
期刊: JOURNAL OF PHYSICS-CONDENSED MATTER
Volume: 17
Issue: 48
起始頁: 7523
結束頁: 7530
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