標題: Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions
作者: Cheng, Chih-Hsien
Tzou, An-Jye
Chang, Jung-Hung
Chi, Yu-Chieh
Lin, Yung-Hsiang
Shih, Min-Hsiung
Lee, Chao-Kuei
Wu, Chih-I
Kuo, Hao-Chung
Chang, Chun-Yen
Lin, Gong-Ru
電子物理學系
電子工程學系及電子研究所
光電工程學系
光電工程研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of EO Enginerring
公開日期: 22-Jan-2016
摘要: The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1-x) buffer is demonstrated. The a-SixC1-x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1-x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1-x buffer. The C-rich SixC1-x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1-x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Sirich SixC1-x buffer, the device deposited on C-rich SixC1-x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively.
URI: http://dx.doi.org/10.1038/srep19757
http://hdl.handle.net/11536/129658
ISSN: 2045-2322
DOI: 10.1038/srep19757
期刊: SCIENTIFIC REPORTS
Volume: 6
起始頁: 0
結束頁: 0
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