標題: Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells
作者: Tsai, Yu-Lin
Wang, Sheng-Wen
Huang, Jhih-Kai
Hsu, Lung-Hsing
Chiu, Ching-Hsueh
Lee, Po-Tsung
Yu, Peichen
Lin, Chien-Chung
Kuo, Hao-Chung
光電系統研究所
光電工程學系
光電工程研究所
Institute of Photonic System
Department of Photonics
Institute of EO Enginerring
公開日期: 30-Nov-2015
摘要: This work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition in quantum wells (GQWs) toward p-GaN as absorber. The GQW can improve the fill factor from 42% to 62% and enhance the short current density from 0.8 mA/cm(2) to 0.92 mA/cm(2), as compares to the typical MQW solar cells. As a result, the PCE is boosted from 0.63% to 1.11% under AM1.5G illumination. Based on simulation and experimental results, the enhanced PCE can be attributed to the improved carrier collection in GQW caused by the reduction of potential barriers and piezoelectric polarization induced fields near the p-GaN layer. The presented concept paves a way toward highly efficient InGaN-based solar cells and other GaN-related MQW devices. (C) 2015 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.23.0A1434
http://hdl.handle.net/11536/129572
ISSN: 1094-4087
DOI: 10.1364/OE.23.0A1434
期刊: OPTICS EXPRESS
Volume: 23
Issue: 24
起始頁: 0
結束頁: 0
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