標題: InN-based heterojunction photodetector with extended infrared response
作者: Hsu, Lung-Hsing
Kuo, Chien-Ting
Huang, Jhih-Kai
Hsu, Shun-Chieh
Lee, Hsin-Ying
Kuo, Hao-Chung
Lee, Po-Tsung
Tsai, Yu-Lin
Hwang, Yi-Chia
Su, Chen-Feng
He, Jr-Hau
Lin, Shih-Yen
Cheng, Yuh-Jen
Lin, Chien-Chung
光電系統研究所
照明與能源光電研究所
光電工程研究所
Institute of Photonic System
Institute of Lighting and Energy Photonics
Institute of EO Enginerring
公開日期: 30-Nov-2015
摘要: The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two non-radiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination. (C) 2015 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.23.031150
http://hdl.handle.net/11536/129571
ISSN: 1094-4087
DOI: 10.1364/OE.23.031150
期刊: OPTICS EXPRESS
Volume: 23
Issue: 24
起始頁: 31150
結束頁: 31162
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