標題: Poly(3,4ethylenedioxythiophene): poly(styrenesulfonate)/GaAs hybrid solar cells with 13% power conversion efficiency using front- and back-surface field
作者: Lin, C. H.
Sun, K. W.
Liu, Q. M.
Shirai, H.
Lee, C. P.
應用化學系
電子工程學系及電子研究所
Department of Applied Chemistry
Department of Electronics Engineering and Institute of Electronics
公開日期: 21-Sep-2015
摘要: Planar hybrid solar cells based on bulk GaAs wafers with a background doping density of 1016 cm(-3) and poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) demonstrated an excellent power conversion efficiency of 8.99%. The efficiency of the cell was enhanced to 9.87% with a back-surface field feature using a molecular beam epitaxially grown n-type GaAs epi-layer. The efficiency and fill factor reach 11.86% and 0.8 when an additional p + GaAs epi-layer is deposited on the surface of the solar cells, which provides a front-surface field. The interface between the high-and low-doped regions in the polymer/GaAs and GaAs formed an electric field that introduced a barrier to minority carriers flow to the substrate and effectively reduced front surface carrier recombination, thereby enhancing light-generated free carrier collection efficiency and open-circuit voltage. Compared with the device without the front-and back-surface field, the fill factor and open-circuit voltage of the hybrid solar cell were improved from 0.76 to 0.8 and from 0.68 V to 0.77V, respectively. The highest efficiency reaches a record 13% when the Zonyl fluorosurfactant-treated PEDOT: PSS is used as a hole-transporting conducting layer for hybrid cells. (C) 2015 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.23.0A1051
http://hdl.handle.net/11536/129430
ISSN: 1094-4087
DOI: 10.1364/OE.23.0A1051
期刊: OPTICS EXPRESS
Volume: 23
Issue: 19
起始頁: 0
結束頁: 0
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