標題: Damage of light-emitting diodes induced by high reverse-bias stress
作者: Chen, N. C.
Wang, Y. N.
Wang, Y. S.
Lien, W. C.
Chen, Y. C.
電子物理學系
Department of Electrophysics
關鍵字: Defects;Metal organic chemical vapor deposition;Nitrides;Light-emitting diode
公開日期: 15-一月-2009
摘要: The ability of a nitride light-emitting diode (LED) to withstand electrostatic discharge (ESD) is important because of the insulating property of the sapphire substrate. Therefore, damage caused by ESD to a nitride LED is a valuable subject. However, damage is caused by ESD in a very short period, so monitoring its evolution is very difficult. Accordingly, ESD experiments are performed and the effects of a high reverse Current (HRC) on devices are investigated. Damage caused by ESD and HRC and their other effects on devices are compared. Four distinct effects of the ESD on devices are illustrated. (c) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.09.123
http://hdl.handle.net/11536/12901
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2008.09.123
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 311
Issue: 3
起始頁: 994
結束頁: 997
顯示於類別:會議論文


文件中的檔案:

  1. 000264161700137.pdf