|標題:||Damage of light-emitting diodes induced by high reverse-bias stress|
|作者:||Chen, N. C.|
Wang, Y. N.
Wang, Y. S.
Lien, W. C.
Chen, Y. C.
Department of Electrophysics
|關鍵字:||Defects;Metal organic chemical vapor deposition;Nitrides;Light-emitting diode|
|摘要:||The ability of a nitride light-emitting diode (LED) to withstand electrostatic discharge (ESD) is important because of the insulating property of the sapphire substrate. Therefore, damage caused by ESD to a nitride LED is a valuable subject. However, damage is caused by ESD in a very short period, so monitoring its evolution is very difficult. Accordingly, ESD experiments are performed and the effects of a high reverse Current (HRC) on devices are investigated. Damage caused by ESD and HRC and their other effects on devices are compared. Four distinct effects of the ESD on devices are illustrated. (c) 2008 Elsevier B.V. All rights reserved.|
|期刊:||JOURNAL OF CRYSTAL GROWTH|