Title: Comparison of TFTs made by IMPRINT and IMPRINT-ELA methods
Authors: Hou, CY
Wu, YS
Department of Materials Science and Engineering
Issue Date: 2006
Abstract: Comparison of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by both IMPRINT and IMPRINT-excimer loser annealing (ELA) methods was investigated. IMPRINT poly-Si was fabricated by pressing imprint mold (coated with Ni film) together with amorphous Si film and then annealing at 550 degrees C. After the sample stack was separated, IMPRINT poly-Si film was irradiated by an excimer laser to form IMPRINT-ELA poly-Si. Upon increasing the laser energy to 345 mJ/cm(2), the performance of IMPRINT-ELA-TFT was found to be far superior to that of IMPRINT-TFT due to larger grains and fewer intragrain defects of the IMPRINT-ELA poly-Si film than that of the IMPRINT poly-Si film. The mobility of the IMPRINT-ELA-TFT was 413 cm(2)/Vs, which was 31.7 times higher than that of the IMPRINT-TFT. The on/off current ratio of the IMPRINT-ELA-TFT was 4.24 x 10(6), which was two orders magnitude higher than that of the IMPRINT-TFT. (c) 2006 The Electrochemical Society.
URI: http://hdl.handle.net/11536/12884
ISSN: 1099-0062
DOI: 10.1149/1.2206891
Volume: 9
Issue: 8
Begin Page: H71
End Page: H73
Appears in Collections:Articles