標題: Growth and characterization of diamond films on TiN/Si(100) by microwave plasma chemical vapor deposition
作者: Chen, Wei-Chun
Wang, Wei-Lin
Tiwari, Rajanish N.
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Diamond film;Nitrides;Chemical vapor deposition;Interface characterization;Morphology
公開日期: 1-二月-2009
摘要: Polycrystalline diamond films were deposited on silicon (100) substrate by microwave plasma chemical vapor disposition (MPCVD) using similar to 300 nm thick < 001 > textured titanium nitride (TiN) films as buffer layer which were prepared by radio-frequency reactive sputtering. The diamond/TiN films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The results show that no apparent change can be observed for the < 100 > oriented TiN buffer layers after MPCVD even with a negative bias voltage applied onto the substrates. (C) 2008 Published by Elsevier B.V.
URI: http://dx.doi.org/10.1016/j.diamond.2008.10.018
http://hdl.handle.net/11536/12878
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2008.10.018
期刊: DIAMOND AND RELATED MATERIALS
Volume: 18
Issue: 2-3
起始頁: 124
結束頁: 127
顯示於類別:會議論文


文件中的檔案:

  1. 000264429300006.pdf