|標題:||Growth and characterization of diamond films on TiN/Si(100) by microwave plasma chemical vapor deposition|
Tiwari, Rajanish N.
Department of Materials Science and Engineering
|關鍵字:||Diamond film;Nitrides;Chemical vapor deposition;Interface characterization;Morphology|
|摘要:||Polycrystalline diamond films were deposited on silicon (100) substrate by microwave plasma chemical vapor disposition (MPCVD) using similar to 300 nm thick < 001 > textured titanium nitride (TiN) films as buffer layer which were prepared by radio-frequency reactive sputtering. The diamond/TiN films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The results show that no apparent change can be observed for the < 100 > oriented TiN buffer layers after MPCVD even with a negative bias voltage applied onto the substrates. (C) 2008 Published by Elsevier B.V.|
|期刊:||DIAMOND AND RELATED MATERIALS|
|Appears in Collections:||Conferences Paper|
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