標題: Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
作者: Tu, Chun-Hao
Chang, Ting- Chang
Liu, Po-Tsun
Chen, Chih-Hung
Yang, Che-Yu
Wu, Yung-Chun
Liu, Hsin-Chou
Chang, Li-Ting
Tsai, Chia-Chou
Sze, Simon M.
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 2006
摘要: Solid phase recrystallized polycrystalline silicon thin-film transistors (SPC poly-Si TFTs) with fluorine ion implantation were investigated in this study. Electrical characteristics and reliability of the proposed poly-Si TFTs were improved effectively, especially for field effect mobility and off current. The fluorine-ion-implanted poly-Si TFT can suppress the hot carrier multiplication near the drain side, leading to superior endurance to electrical stress compared with conventional poly-Si TFTs. It was found that fluorine ions will pile up at the poly-Si interface during thermal annealing, without the initial deposition of pad oxide. The proposed technology is manageable and compatible with conventional poly-Si TFT fabrication. As the ion dosages increase more than 5x10(15) cm(-2), however, the electrical characteristics of poly-Si TFTs were degraded due to the increase of trap state density caused by the fluorine segregation in the poly-Si film.
URI: http://hdl.handle.net/11536/12864
http://dx.doi.org/10.1149/1.2214468
ISSN: 0013-4651
DOI: 10.1149/1.2214468
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 153
Issue: 9
起始頁: G815
結束頁: G818
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