標題: A quantum trap MONOS memory device using AlN
作者: Lai, CH
Wu, CH
Chin, A
Wang, SJ
McAlister, SP
奈米科技中心
Center for Nanoscience and Technology
公開日期: 2006
摘要: We report a IrO2-HfAlO-AlN-SiO2-Si MONOS device that displays excellent characteristics in terms of speed (100 mu s at +/- 13 V for program/erase) and memory window (3.7 V) at 85 degrees C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85 degrees C. The achieved performance compares well with the best reported memory device data. (c) 2006 The Electrochemical Society.
URI: http://hdl.handle.net/11536/12863
http://dx.doi.org/10.1149/1.2208742
ISSN: 0013-4651
DOI: 10.1149/1.2208742
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 153
Issue: 8
起始頁: G738
結束頁: G741
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