|標題:||High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architecture|
|作者:||Chang, Y. F.|
Chen, Y. C.
Tsai, T. M.
Chang, K. C.
Chen, M. C.
Chang, T. C.
Yu, E. T.
Lee, J. C.
Department of Electronics Engineering and Institute of Electronics
|摘要:||A highly compact, one diode - one resistor (1D-1R) nano-pillar device architecture has been demonstrated using nano-sphere lithography (NSL) to fabricate SiOx-based resistive switching (RS) memory. The intrinsic SiOx-based resistive switching element and Si-based PN diode are self-aligned on the epitaxial silicon wafer using NSL and a deep-Si-etch process without using conventional photolithography. The DC electrical performance, an AC pulse response in the 50 ns regime, capability for multi-bit operation, and high readout margin immunity for sneak path issue demonstrate good potential for high-speed nonvolatile memory (NVM). The NSL fabrication process is an efficient, economical approach to enable large-scale patterning of 1D-1R architectures while providing excellent NVM performance for future applications.|
|期刊:||PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)|
|Appears in Collections:||Conferences Paper|