標題: 1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
作者: Yu, HC
Wang, JS
Su, YK
Chang, SJ
Lai, FI
Chang, YH
Kuo, HC
Sung, CP
Yang, HPD
Lin, KF
Wang, JM
Chi, JY
Hsiao, RS
Mikhrin, S
光電工程學系
Department of Photonics
關鍵字: fully doped distributed Bragg reflector (DBR);InAs quantum dot (QD);molecular beam epitaxy (NME);vertical-cavity surface-emitting laser (VCSEL)
公開日期: 1-Jan-2006
摘要: We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p(+) (GaAs)-Ga-. contact layer and on the bottom surface of the n(+)-GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 mu m, with a sidemode suppression ratio of 28 dB.
URI: http://dx.doi.org/10.1109/LPT.2005.863166
http://hdl.handle.net/11536/12847
ISSN: 1041-1135
DOI: 10.1109/LPT.2005.863166
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 18
Issue: 1-4
起始頁: 418
結束頁: 420
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