|標題:||1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE|
Department of Photonics
|關鍵字:||fully doped distributed Bragg reflector (DBR);InAs quantum dot (QD);molecular beam epitaxy (NME);vertical-cavity surface-emitting laser (VCSEL)|
|摘要:||We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p(+) (GaAs)-Ga-. contact layer and on the bottom surface of the n(+)-GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 mu m, with a sidemode suppression ratio of 28 dB.|
|期刊:||IEEE PHOTONICS TECHNOLOGY LETTERS|
|Appears in Collections:||Articles|
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