標題: Bandgap tunability at single-layer molybdenum disulphide grain boundaries
作者: Huang, Yu Li
Chen, Yifeng
Zhang, Wenjing
Quek, Su Ying
Chen, Chang-Hsiao
Li, Lain-Jong
Hsu, Wei-Ting
Chang, Wen-Hao
Zheng, Yu Jie
Chen, Wei
Wee, Andrew T. S.
電機學院
College of Electrical and Computer Engineering
公開日期: 1-Feb-2015
摘要: Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40 +/- 0.05 eV for single-layer, 2.10 +/- 0.05 eV for bilayer and 1.75 +/- 0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85 +/- 0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.
URI: http://dx.doi.org/10.1038/ncomms7298
http://hdl.handle.net/11536/128095
ISSN: 2041-1723
DOI: 10.1038/ncomms7298
期刊: NATURE COMMUNICATIONS
Volume: 6
起始頁: 0
結束頁: 0
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