標題: The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors
作者: Lu, Ying-Hsin
Chang, Ting-Chang
Ho, Szu-Han
Chen, Ching-En
Tsai, Jyun-Yu
Liu, Kuan-Ju
Liu, Xi-Wen
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Lu, Ching-Sen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2015
摘要: This study investigates the impact of pre/post-metal deposition annealing on negative-bias-temperature instability (NBTI) in HfO2 stack p-channel metal-oxide-semiconductor field effect transistors (MOSFETs). In the initial electrical characteristics, the most apparent difference is threshold voltage (V-th) resulting from the work-function difference between the gate material and the semiconductor. Furthermore, fast I-V measurements indicate that the device with post-metal deposition annealing shows more degradation of V-th in NBTI, which originates from the more nitrogen interstitial defects in HfO2. This phenomenon is confirmed to be due to the process-related pre-existing defects by an analysis of double sweep fast I-V measurements. (c) 2015 The Electrochemical Society. All rights reserved.
URI: http://dx.doi.org/10.1149/2.0031508ssl
http://hdl.handle.net/11536/127945
ISSN: 2162-8742
DOI: 10.1149/2.0031508ssl
期刊: ECS SOLID STATE LETTERS
起始頁: Q37
結束頁: Q39
Appears in Collections:Articles