標題: Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency
作者: Lee, CL
Lee, SC
Lee, WI
電子物理學系
友訊交大聯合研發中心
Department of Electrophysics
D Link NCTU Joint Res Ctr
關鍵字: light-emitting diode;GaN;InGaN;surface roughness;MOCVD regrowth
公開日期: 1-一月-2006
摘要: In this study, p-GaN microhillocks are grown on the top of a standard multiple-quantum-well (MQW) light-emitting diode (LED) with novel nonlithographic random masking. Such microhillocks can dramatically increase the external efficiency of the LED because of the destroyed symmetry of LED interfaces. By controlling metalorganic chemical vapor deposition (MOCVD) growth conditions, p-GaN microhillocks of various densities and sizes can be easily grown on a standard LED structure. The use of this novel method to grow microhillocks on the top of the LED can facilitate the control of the leakage current of LED compared that of the photo enhanced chemical (PEC) wet etch and inductively coupled plasma (ICP) dry etch methods.
URI: http://dx.doi.org/10.1143/JJAP.45.L4
http://hdl.handle.net/11536/12794
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.L4
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 45
Issue: 1-3
起始頁: L4
結束頁: L7
顯示於類別:期刊論文


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  1. 000235173900002.pdf