標題: Effects of nitrogen-doping on the microstructure, bonding and electrochemical activity of carbon nanotubes
作者: Lin, Y. G.
Hsu, Y. K.
Wu, C. T.
Chen, S. Y.
Chen, K. H.
Chen, L. C.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Carbon nanotubes;Electron-transfer;Nitrogen-doping
公開日期: 1-Feb-2009
摘要: Vertically aligned carbon nanotubes produced with in-situ doping of nitrogen (CN(x) NTs) during chemical vapor deposition exhibit unique structural and electrochemical properties, which are strongly correlated with their nitrogen (N) doping level. In this work, the effects of N-doping on CN(x) NTs have been systematically investigated via microstructure and bonding studies, electron-transfer (ET) behaviors, and subsequent electrochemical deposition of catalyst. The CN(x) NTs doped with an optimal N level, while showing a nearly reversible ET behavior, in fact exhibit uniform and high density of surface defects. These surface defects are desirable for further modification and/or nucleation of catalytic particles on the surface of CN(x) NTs to form a composite electrode for electrochemical energy device applications such as fuel cells and capacitors. (c) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.diamond.2008.09.009
http://hdl.handle.net/11536/12790
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2008.09.009
期刊: DIAMOND AND RELATED MATERIALS
Volume: 18
Issue: 2-3
起始頁: 433
結束頁: 437
Appears in Collections:Conferences Paper


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