標題: Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique
作者: Gu, SH
Wang, TH
Lu, WP
Ting, WC
Ku, YHJ
Lu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: charge pumping (CP);cycling stress;programmed charge distribution;two-bit storage nitride Flash cell
公開日期: 1-Jan-2006
摘要: In this paper, we use a modified charge pumping technique to characterize the programmed charge lateral distribution in a hot electron program/hot hole erase, two-bit storage nitride Flash memory cell. The stored charge distribution of each bit over the source/drain junctions can be profiled separately. Our result shows that the second programmed bit has a broader stored charge distribution than the first programmed bit. The reason is that a large channel field exists under the first programmed bit during the second bit programming. Such a large field accelerates channel electrons and causes earlier electron injection into the nitride. In addition, we find that programmed charges spread further into the channel as program/erase cycle number increases.
URI: http://dx.doi.org/10.1109/TED.2005.860632
http://hdl.handle.net/11536/12776
ISSN: 0018-9383
DOI: 10.1109/TED.2005.860632
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 53
Issue: 1
起始頁: 103
結束頁: 108
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