標題: Fabrication and characterization of the Pd-silicided emitters for field-emission devices
作者: Wang, CC
Ku, TK
Hsieh, IJ
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Pd;silicided;field emitter;micromachining;sharpening;annealing;TEM
公開日期: 1-六月-1996
摘要: The structure of Pd-silicided held emitters based on the silicon micromachining technology has been demonstrated. The uniform and extremely sharp silicided emitters are formed using wet chemical etching, low-temperature oxidation sharpening (LTOS), metal coating, and furnace annealing. The silicided emitters are firstly identified by the bright-held, dark-held images, and diffraction patterns of transmission electron microscope (TEM). Under the applied voltage of 1100 V, the anode currents of the Pd-coated and silicided emitters are 16 mu A and 26 mu A, respectively. The values of threshold voltage V-T for Pd-coated and silicided emitters are about 745 V and 785 V, respectively. The lower threshold voltage of the Pd-coated emitters is duo to the smaller emission work function of palladium. The emission work function of the Pd-silicided emitters is calculated to be 8.31 eV. Furthermore; the long and short-term current stabilities of silicided emitters is also better than that of Pd-coated ones. These results show that these silicided emitters have potential applications in vacuum microelectronics to obtain superior Lifetime, reliability, and stability.
URI: http://dx.doi.org/10.1143/JJAP.35.3681
http://hdl.handle.net/11536/1274
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.3681
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 35
Issue: 6A
起始頁: 3681
結束頁: 3685
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UX14000071.pdf