標題: Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy
作者: Lai, YJ
Lin, YC
Fu, CP
Yang, CS
Chia, CH
Chuu, DS
Chen, WK
Lee, MC
Chou, WC
Kuo, MC
Wang, JS
電子物理學系
Department of Electrophysics
關鍵字: atomic force microscopy;agrowth models;molecular beam epitaxy;quantum dots;cadmium compounds;semiconducting II-VT materials
公開日期: 15-Jan-2006
摘要: Self-assembled CdSe/ZnSe quantum dots (QDs) were grown at various growth temperatures on GaAs (0 0 1) by molecular beam epitaxy. An optimum growth temperature for CdSe/ZnSe QDs was found to be 260 degrees C. The Stranski-Krastanow (SK) growth mode was confirmed clearly by atomic force microscopy images. The coherent SK QDs were observed from 2.5 monolayers (MLs). Two types of QDs were found with the CdSe coverage of 3.0 MLs. It was attributed to a growth mode change from the coherent SK growth mode to the ripening growth mode. A schematic diagram of the growth mechanism of self-assembled CdSe QDs was presented. Moreover, the photoluminescence spectra of samples with various thicknesses were investigated. A dramatic change of optical properties confirmed that the QD structure formed with thickness above 2.5 MLs. Finally, the dot size and the density distributions were controlled after growth by in-chamber thermal annealing. For the sample grown at 3.0 MLs, the distribution of dot sizes was controlled from 6.0 to 6.5 x 10(3) nm(3) at an annealing temperature of 400 degrees C. (c) 2005 Published by Elsevier B.V.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2005.10.124
http://hdl.handle.net/11536/12736
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2005.10.124
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 286
Issue: 2
起始頁: 338
結束頁: 344
Appears in Collections:Articles


Files in This Item:

  1. 000234758300021.pdf