標題: Excellent emission characteristics of tunneling oxides formed using ultrathin silicon films for flash memory devices
作者: Wang, PW
Ku, TK
Su, HP
Hong, G
Cheng, HC
電子工程學系及電子研究所
奈米中心
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
關鍵字: simulator;HRTEM;rugged polysilicon;amorphous silicon;microtip;tip radius;tip angle;tip height
公開日期: 1-六月-1996
摘要: A novel technique using oxidized ultrathin rugged polysilicon films on silicon substrates has been appied to significantly improve the tunneling efficiency of thin oxides. As compared with oxidized amorphous silicon films, these rugged polysilicon films can achieve a higher emission current. High-resolution transmission electron microscopy (HRTEM) was used to observe the atomic-scale microtips at the SiO2/Si and polysilicon/SiO2 interfaces. According to the extracted geometry parameters of the microtips, a two-dimensional numerical simulator based on the finite difference method using the curved emitting surface of microtips can well explain the remarkable current asymmetry of the dielectrics. This suggests that the oxidized rugged polysilicon films can form higher microtips and smaller tip angles, resulting in better emission characteristics that will enable potential applications to future 5-V-only nonvolatile memories.
URI: http://dx.doi.org/10.1143/JJAP.35.3369
http://hdl.handle.net/11536/1273
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.3369
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 35
Issue: 6A
起始頁: 3369
結束頁: 3373
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UX14000011.pdf