標題: Structural evolution of AlN nano-structures: Nanotips and nanorods
作者: Shi, SC
Chattopadhyay, S
Chen, CF
Chen, KH
Chen, LC
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 25-一月-2006
摘要: Aluminum nitride (AIN) nanostructures were prepared using thermal chemical vapour deposition process. At growth temperatures of 950 degrees C, AIN nanotips with apex diameters of 10 nm, base diameters of similar to 100 nm, and length of similar to 2000 nm were obtained. Whereas when the growth temperature was 1200 degrees C, we obtained shorter and ihicker AIN nanorods. Compelling microscopic evidences were obtained to show that stacked AIN platelets of diminishing size formed the building blocks for the nanotips. A reducing Ehrlich-Schwoebel barrier introduced into a diffusion mediated growth model explains the formation of AIN nanorods at increasing growth temperatures. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.cplett.2005.10.107
http://hdl.handle.net/11536/12715
ISSN: 0009-2614
DOI: 10.1016/j.cplett.2005.10.107
期刊: CHEMICAL PHYSICS LETTERS
Volume: 418
Issue: 1-3
起始頁: 152
結束頁: 157
顯示於類別:期刊論文


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