|標題:||Correlated Electric Fluctuations in GaN Nanowire Devices|
|作者:||Li, L. C.|
Huang, S. Y.
Wei, J. A.
Suen, Y. W.
Lee, M. W.
Hsieh, W. H.
Liu, T. W.
Chen, C. C.
Center for Nanoscience and Technology
|關鍵字:||Noise;Low-Frequency Excess Noise;GaN Nanowire;Electric Fluctuation;Correlation;Cross Spectrum|
|摘要:||We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.|
|期刊:||JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY|
|Appears in Collections:||Conferences Paper|