標題: High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector
作者: Lee, YJ
Lu, TC
Kuo, HC
Wang, SC
Liou, MJ
Chang, CW
Hsu, TC
Hsieh, MH
Jou, MJ
Lee, BJ
光電工程學系
Department of Photonics
公開日期: 1-Feb-2006
摘要: An n-side-up AlGaInP-based LED operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) was fabricated by adopting the adhesive-layer bonding scheme. It is demonstrated that the periodic and geometrical shape of the stripe-patterned array improves the light extraction efficiency by increasing the extraction of guided light. Compared to the conventional ODR LED, the stripe-patterned ODR LED significantly enhanced the output power and with only a slightly higher forward voltage. This improvement was analysed by the scanning near-field optical microscope (SNOM) and the optimized dimension of stripe patterns was also calculated on the basis of a Monte Carlo ray tracing simulation. According to the above analysis, the increase of light extraction could not only be attributed to the geometrical shape of the stripe patterns that redirect the trapped light towards the top-escaping cone of the LED surface but also to the repetitive stripe-patterned array of diffracting elements that effectively diffract the guided light outside the LED surface. Moreover, the optimized dimension of the stripe pattern is 3 mu m wide, 2 mu m deep and spaced 3 mu m apart, which coincides with experimental results.
URI: http://dx.doi.org/10.1088/0268-1242/21/2/016
http://hdl.handle.net/11536/12673
ISSN: 0268-1242
DOI: 10.1088/0268-1242/21/2/016
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 21
Issue: 2
起始頁: 184
結束頁: 189
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