標題: High work function IrxSi gates on HfAlON p-MOSFETs
作者: Wu, CH
Yu, DS
Chin, A
Wang, SJ
Li, MF
Zhu, C
Hung, BE
McAlister, SP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: HfAlON;IrSi;MOSFET
公開日期: 1-Feb-2006
摘要: We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-mn equivalent oxide thickness. After 950 degrees C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm(2)/V.s, and the advantage of being process compatible to the current VLSI fabrication line.
URI: http://dx.doi.org/10.1109/LED.2005.862687
http://hdl.handle.net/11536/12669
ISSN: 0741-3106
DOI: 10.1109/LED.2005.862687
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 2
起始頁: 90
結束頁: 92
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