標題: A new lossy substrate de-embedding method for sub-100 nm RF CMOS noise extraction and modeling
作者: Guo, JC
Lin, YM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: de-embedding;noise;pad;RF CMOS;substrate
公開日期: 1-二月-2006
摘要: A new equivalent circuit method is proposed in this paper to de-embed the lossy substrate and lossy pads' parasitics; from the measured RF noise of multifinger MOSFETs with aggressive gate length scaling down to 80 run. A new RLC network model is subsequently developed to simulate the lossy substrate and lossy pad effect. Good agreement has been realized between the measurement and simulation in terms of S-parameters and four noise parameters, NFmin,, (minimum noise figure), R, (noise resistance), Re(Y-sopt), and Im(Y-sopt) for the sub-100-nm RF nMOS devices. The intrinsic NFmin extracted by the new de-embedding method reveal that NFmin at 10 GHz can be suppressed to below 0.8 dB for the 80-nm nMOS attributed to the advancement of f(T) to 100-GHz level and the effectively reduced gate resistance by multifinger structure.
URI: http://dx.doi.org/10.1109/TED.2005.862699
http://hdl.handle.net/11536/12652
ISSN: 0018-9383
DOI: 10.1109/TED.2005.862699
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 53
Issue: 2
起始頁: 339
結束頁: 347
顯示於類別:期刊論文


文件中的檔案:

  1. 000234850600021.pdf