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dc.contributor.authorLiu, THen_US
dc.contributor.authorHsu, SFen_US
dc.contributor.authorHo, MHen_US
dc.contributor.authorLiao, CHen_US
dc.contributor.authorWu, YSen_US
dc.contributor.authorChen, CHen_US
dc.contributor.authorTung, YLen_US
dc.contributor.authorWu, PCen_US
dc.contributor.authorChi, Yen_US
dc.date.accessioned2014-12-08T15:17:23Z-
dc.date.available2014-12-08T15:17:23Z-
dc.date.issued2006-02-06en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2172405en_US
dc.identifier.urihttp://hdl.handle.net/11536/12635-
dc.description.abstractWe have applied a stericly-hindered red phosphorescent dopant Os(fptz)(2)(PPh2Me)(2) [fptz=3-trifluoromethyl-5-(2-pyridyl)-1,2,4-triazole, PPh2Me=phosphine ligand] in p-type 4,4(')-N,N-'-dicarbazole-biphenyl or n-type bis(2-methyl-8-quinolinolato)(p-phenylphenolato) aluminum host and found that the latter produced higher luminance efficiency at lower doping concentration. We present a model to rationalize this phenomenon in which the n-type host impedes hole transport, which leads to narrower recombination zone near the hole transport layer/emission layer interface than the p-type host, hence, more effective recombination.en_US
dc.language.isoen_USen_US
dc.titlePhosphorescence of red Os(fptz)(2)(PPh2Me)(2) doped organic light-emitting devices with n and p hostsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2172405en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume88en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000235252800111-
dc.citation.woscount11-
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