標題: Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition
作者: Huang, GS
Lu, TC
Yao, HH
Kuo, HC
Wang, SC
Lin, CW
Chang, L
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
公開日期: 6-二月-2006
摘要: A crack-free GaN/AlN distributed Bragg reflector (DBR) incorporated with GaN/AlN superlattice (SL) layers was grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition. Three sets of half-wave layers consisting of 5.5 periods of GaN/AlN SL layers and GaN layer were inserted in every five pairs of the 20 pair GaN/AlN DBR structure to suppress the crack generation. The grown GaN/AlN DBRs with SL insertion layers showed no observable cracks in the structure and achieved high peak reflectivity of 97% at 399 nm with a stop band width of 14 nm. Based on the x-ray analysis, the reduction in the in-plane tensile stress in the DBR structure with insertion of SL layers could be responsible for the suppression of crack formation and achievement of high reflectivity. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2172007
http://hdl.handle.net/11536/12633
ISSN: 0003-6951
DOI: 10.1063/1.2172007
期刊: APPLIED PHYSICS LETTERS
Volume: 88
Issue: 6
結束頁: 
顯示於類別:期刊論文


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