標題: Nanomechanical characterizations of InGaN thin films
作者: Jian, SR
Fang, TH
Chuu, DS
電子物理學系
Department of Electrophysics
關鍵字: InGaN;XRD;AFM;nanoindentation;creep
公開日期: 15-Feb-2006
摘要: InxGa1-x thin films with In concentration ranging from 25 to 34 at.% were deposited on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Crystalline structure and surface morphology of the deposited films were studied by using X-ray diffraction (XRD) and atomic force microscopy (AFM). Hardness, Young's modulus and creep resistance were measured using a nanoindenter. Among the deposited films, In0.25Ga0.75N film exhibits a larger grain size and a higher surface roughness. Results indicate that hardness decreases slightly with increasing In concentration in the InxGa1-xN films ranged from 16.6 +/- 1.1 to 16.1 +/- 0.7 GPa and, Young's modulus for the In0.25Ga0.75N, In0.3Ga0.7N and In0.34Ga0.66N films are 375.8 +/- 23.1, 322.4 +/- 13.5 and 373.9 +/- 28.6 GPa, respectively. In addition, the time-dependent nanoindentation creep experiments are presented in this article. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2005.05.019
http://hdl.handle.net/11536/12625
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2005.05.019
期刊: APPLIED SURFACE SCIENCE
Volume: 252
Issue: 8
起始頁: 3033
結束頁: 3042
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