標題: The study of diffusion and nucleation for COSi2 formation by oxide-mediated cobalt silicidation
作者: Chang, JJ
Liu, CP
Hsieh, TE
Wang, YL
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: cobalt silicide;diffusion;nucleation;oxide-mediated silicidation
公開日期: 24-Feb-2006
摘要: The role of cobalt in oxide-mediated silicidation is studied in terms of diffusion and nucleation by varying annealing conditions, oxide thickness and implantation in Si substrate. Electroscopic imaging in transmission electron microscopy shows that SiOx act as a one-way diffusion barrier reducing the Co effective concentration at the cobalt silicide growth interface leading to CoSi2 as the first formation phase during silicidation. X-ray photoelectron spectroscopy analysis shows that unreacted Co coexists with CoSi2 at the interface between the SiOx layer and Si substrate, implying that Co diffusion rate is faster than CoSi, nucleation rate. An Si-implanted substrate can increase the CoSi2 nucleation rate and reduce the Co accumulation. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2005.07.044
http://hdl.handle.net/11536/12617
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2005.07.044
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 200
Issue: 10
起始頁: 3314
結束頁: 3318
Appears in Collections:Conferences Paper


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