標題: A novel method for growing polycrystalline Ge layer by using UHVCVD
作者: Tu, CH
Chang, TC
Liu, PT
Yang, TH
Zan, HW
Chang, CY
電子工程學系及電子研究所
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Institute of Display
關鍵字: UHVCVD;polycrystalline;germanium
公開日期: 24-二月-2006
摘要: Poly-Ge grown on SiO2 substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 degrees C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO2 substrates at low growth temperature. SEM image presents the films with uniform rain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2005.07.026
http://hdl.handle.net/11536/12614
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2005.07.026
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 200
Issue: 10
起始頁: 3261
結束頁: 3264
顯示於類別:會議論文


文件中的檔案:

  1. 000235427000033.pdf