標題: Heat, moisture and chemical resistance on low dielectric constant (low-k) film using diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor deposition
作者: Cheng, YL
Wang, YL
Lan, JK
Hwang, GJ
O'Neil, ML
Chen, CF
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: low dielectric constant;diethoxymethylsilane;organosilicate glass;thermal stability
公開日期: 24-Feb-2006
摘要: Resistance of low dielectric constant (low-k) dielectrics, deposited using Diethoxymethylsilane (DEMS) precursor and helium (He) carrier gas with or without oxygen (O-2) reaction gas, against heat, moisture stress and chemical treatment is clarified. The low dielectric constant organosilicate glass (OSG) films deposited using DEMS and O-2 is shown to be the most reliable: the dielectric constant are stable even after a heating test at 700 degrees C and a pressure cooker test (PCT) for 168 h. This stability is high enough to ensure the low-k properties throughout fabricating multilevel interconnects and long-term reliability after the fabrication. This is due to the stability of Si-CH3 bonds and more Si-C-Si- bonds, which has high degree of cross-linking. However, the degradation of the dielectric constant occurs after O-2 plasma ashing process. The nitrogen plasma treatment is proposed to prevent the damage from O-2 attack in the low-k films deposited using DEMS precursor. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2005.07.014
http://hdl.handle.net/11536/12609
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2005.07.014
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 200
Issue: 10
起始頁: 3127
結束頁: 3133
Appears in Collections:Conferences Paper


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