標題: Investigation of overpotential and seed thickness on damascene copper electroplating
作者: Chen, KW
Wang, YL
Chang, L
Li, FY
Chang, SC
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: copper electroplating;plating current density;overpotential;copper seed layer
公開日期: 24-Feb-2006
摘要: This study found that higher overpotential from higher plating current density and a thinner seed layer resulted in more incorporation of sulfur impurities into a deposited copper film. Our results suggested that the higher plating overpotential resulted in smaller copper grains with more grain boundaries where more impurities were trapped. To achieve a defect-free filling in vias, the optimization of the plating current density and the seed layer thickness was necessary. A copper seed with thickness less than 30 generated a sulfur-rich copper film, while, thickness larger than 200 nm for 0.13-nm technologies, the copper seed led to a poor gapfilling with a void after electroplating. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2005.07.007
http://hdl.handle.net/11536/12608
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2005.07.007
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 200
Issue: 10
起始頁: 3112
結束頁: 3116
Appears in Collections:Conferences Paper


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