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dc.contributor.authorChen, BHen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorWei, JHen_US
dc.contributor.authorWang, HHen_US
dc.contributor.authorTsai, MJen_US
dc.contributor.authorChao, TSen_US
dc.date.accessioned2014-12-08T15:17:20Z-
dc.date.available2014-12-08T15:17:20Z-
dc.date.issued2006-02-27en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2179612en_US
dc.identifier.urihttp://hdl.handle.net/11536/12603-
dc.description.abstractWe introduce, a complementary carbon nanotube (CNT)-gated CNT thin-film field effect transistor (FET). By using two perpendicularly crossed single-wall CNT (SWNT) bundles as the gate and the channel interchangeably, a sub-50 nm complementary CNT-FET is demonstrated. It is found that the new CNT-FET shows acceptable FET characteristics by interchanging the roles of the gate and the channel. The unique dual functionality of the device will open up a new possibility and flexibility in the design of future complementary CNT electronic circuits. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleComplementary carbon nanotube-gated carbon nanotube thin-film transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2179612en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume88en_US
dc.citation.issue9en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000235736300093-
dc.citation.woscount10-
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