標題: Complementary carbon nanotube-gated carbon nanotube thin-film transistor
作者: Chen, BH
Lin, HC
Huang, TY
Wei, JH
Wang, HH
Tsai, MJ
Chao, TS
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 27-Feb-2006
摘要: We introduce, a complementary carbon nanotube (CNT)-gated CNT thin-film field effect transistor (FET). By using two perpendicularly crossed single-wall CNT (SWNT) bundles as the gate and the channel interchangeably, a sub-50 nm complementary CNT-FET is demonstrated. It is found that the new CNT-FET shows acceptable FET characteristics by interchanging the roles of the gate and the channel. The unique dual functionality of the device will open up a new possibility and flexibility in the design of future complementary CNT electronic circuits. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2179612
http://hdl.handle.net/11536/12603
ISSN: 0003-6951
DOI: 10.1063/1.2179612
期刊: APPLIED PHYSICS LETTERS
Volume: 88
Issue: 9
結束頁: 
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